MTN138KS3

CYStech Electronics Corp. N-CHANNEL MOSFET MTN138KS3 Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 1/7 Description The MTN138KS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free package Symbol MTN138KS3 D G G：Gate S S：Source D：Drain Outline SOT-323 D GS Ordering Information Device MTN138KS3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTN138KS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Drain Reverse Current Continuous Pulsed Total Power Dissipation Thermal Resistance, Junction to Ambient ESD susceptibility Operating Channel Temperature Range Storage Temperature Range Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a minimum pad size *3. Human body model, 1.5kΩ in series with 100pF Symbol VDSS VGSS ID IDP IDR IDRP PD RθJA TCH Tstg Limits 60 ±20 220 800 220 800 200 625 1500 -55~+150 -55~+150 *1 *1 *2 *2 *3 Unit V V mA mW °C/W V °C Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* GFS 60 0.5 - 200 Dynamic Ciss Coss Crss ...