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MTN138ZN3 Data Sheet

N-Channel MOSFET

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MTN138ZN3
CYStech Electronics Corp. N-CHANNEL MOSFET MTN138ZN3 Spec. No. : C320N3 Issued Date : 2007.12.23 Revised Date :2012.03.27 Page No. : 1/7 Description The MTN138ZN3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol MTN138ZN3 D G G:Gate S S:Source D:Drain Outline SOT-23 D GS MTN138ZN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.12.23 Revised Date :2012.03.27 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Drain Reverse Current Continuous Pulsed Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDR IDRP PD TCH Tstg Limits 60 ±20 200 800 200 800 200 1550 +150 -55~+150 *1 *1 *2 *3 Note : *1. Pulse Width ≤ 300μs, Duty cyc.
MTN138ZN3

Download MTN138ZN3 Datasheet
CYStech Electronics Corp. N-CHANNEL MOSFET MTN138ZN3 Spec. No. : C320N3 Issued Date : 2007.12.23 Revised Date :2012.03.27 Page No. : 1/7 Description The MTN138ZN3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol MTN138ZN3 D G G:Gate S S:Source D:Drain Outline SOT-23 D GS MTN138ZN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.12.23 Revised Date :2012.03.27 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Drain Reverse Current Continuous Pulsed Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDR IDRP PD TCH Tstg Limits 60 ±20 200 800 200 800 200 1550 +150 -55~+150 *1 *1 *2 *3 Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Unit V V mA mA mA mA mW V °C °C Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 - - VGS(th) 1 1.2 2 IGSS - - ±10 IDSS - - 1 - 3.2 5 - 3.2 5 RDS(ON)* - 2 4 - 24 - 1.5 3 GFS 100 240 - Ciss - 30.6 - Coss - 5.5 - Crss - 4 - Unit Test Conditions V VGS=0, ID=10μA V VDS=VGS, ID=250μA μA VGS=±20V, VDS=0 μA VDS=6.


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