MTN18N20FP

CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN18N20FP BVDSS : 200V RDSON(TYP) : 80mΩ ID : 18A Description The MTN18N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package Symbol MTN18N20FP Outline TO-220FP G：Gate D：Drain S：Source MTN18N20FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 2/ 10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=2mH, ID=18 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum j...