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MTN2300N3 Datasheet, Equivalent, Mode MOSFET.N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET |
| Part | MTN2300N3 |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Feature | CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2300N3 Spec. No. : C413N3 Issued Date : 2007. 07. 05 Revised Date : Page No. : 1/5 Features • VDS=20V RDS(ON)=28mΩ@VGS=4. 5V, IDS=6A RDS(ON)=38mΩ@VGS=2. 5V, IDS=5. 2A • Low on-resistance • Capable of 2. 5V gate drive • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package Equivalent Circuit MTN2300N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Curre. |
| Manufacture | CYStech |
| Datasheet |
| Part | MTN2300N3 |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Feature | CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2300N3 Spec. No. : C413N3 Issued Date : 2007. 07. 05 Revised Date : Page No. : 1/5 Features • VDS=20V RDS(ON)=28mΩ@VGS=4. 5V, IDS=6A RDS(ON)=38mΩ@VGS=2. 5V, IDS=5. 2A • Low on-resistance • Capable of 2. 5V gate drive • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package Equivalent Circuit MTN2300N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Curre. |
| Manufacture | CYStech |
| Datasheet |
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