MTN2306N3

CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS ID RDSON(TYP)@VGS=10V, ID=3.5A RDSON(TYP)@VGS=4.5V, ID=2A 30V 4.8A 35mΩ 58mΩ Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit MTN2306N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C, VGS=10V TA=70°C, VGS=10V ID 4.8 3.8 A Pulsed Drain Current IDM 20 (Note 1 & 2) A Power Dissipation TA=25°C TA=70°C PD 1.38 (Note 3) 0.88 (Note 3) W Thermal Resistance, Junction to Ambient Rth, j-a 90 (Note 3) °C/W Operating Junction and Storage Temperature Tj, Tstg -55 ~ +150 Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1%. 3. Surface mounted on 1 in² copper pad of FR4 board, t≤10s; 270°C/W when mounted on min. copper pad. °C MTB2306N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 2/8 Electrical Characteristics (TA=25°C, unless otherwise specified) Symbol Min. Typ. Max. Static BVDSS VGS(th) IGSS IDSS *RDS(ON) 1 *GFS 1 30 - - 1 1.8 3 - - ±100 - -1 - - 10 - 35 60 - 58 90 -5- Dynamic Ciss Coss Crss *td(ON) 1 2 *tr 1 2 *td(OFF) 1 2 *tf 1 2 *Qg ...