N-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C109N3 Issued Date : 2015.07.31 Revised Date : Page No. : 1/9
60V N-Channel Enha...
Description
CYStech Electronics Corp.
Spec. No. : C109N3 Issued Date : 2015.07.31 Revised Date : Page No. : 1/9
60V N-Channel Enhancement Mode MOSFET
MTN2310AN3
BVDSS ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=4A
RDSON@VGS=5V, ID=3A
60V 4.2A 33.7mΩ(typ)
43.1mΩ(typ)
Features
Simple drive requirement Small package outline Pb-free lead plating and halogen-free package
Symbol
MTN2310AN3
Outline
SOT-23 D
G:Gate S:Source D:Drain
S G
Ordering Information
Device MTN2310AN3-0-T1-G
Package
Shipping
SOT-23 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTN2310AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C109N3 Issued Date : 2015.07.31 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID IDM PD
Tj ; Tstg
Limits 60 ±20 4.2 3.4 16
1.38
0.01 -55~+150
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pa...
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