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MTN2310N3 Datasheet, Equivalent, Mode MOSFET.N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET |
| Part | MTN2310N3 |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Feature | CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET MTN2310N3 Spec. No. : C393N3 Issued Date : 2007. 10. 24 Revised Date : Page No. : 1/6 Features • VDS=60V RDS(ON)=90mΩ(max. )@VGS=10V, IDS=3A RDS(ON)=120mΩ(max. )@VGS=4. 5V, IDS=2A • Simple drive requirement • Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4. 5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4. 5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power D. |
| Manufacture | CYStech |
| Datasheet |
| Part | MTN2310N3 |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Feature | CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET MTN2310N3 Spec. No. : C393N3 Issued Date : 2007. 10. 24 Revised Date : Page No. : 1/6 Features • VDS=60V RDS(ON)=90mΩ(max. )@VGS=10V, IDS=3A RDS(ON)=120mΩ(max. )@VGS=4. 5V, IDS=2A • Simple drive requirement • Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4. 5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4. 5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power D. |
| Manufacture | CYStech |
| Datasheet |
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