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MTN2310V8 Dataheets PDF



Part Number MTN2310V8
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN2310V8 DatasheetMTN2310V8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTN2310V8 BVDSS ID RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A 60V 14A 31mΩ 35mΩ Description The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-re.

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CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTN2310V8 BVDSS ID RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A 60V 14A 31mΩ 35mΩ Description The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package Equivalent Circuit MTN2310V8 Outline Pin 1 DFN3×3 G:Gate D:Drain S:Source Ordering Information Device MTN2310V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTN2310V8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Total Power Dissipation TC=25℃ TA=25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 2/9 Limits 60 ±20 14 9 6 4.8 30 *1 14 2.3 *2 -55~+150 Unit V A W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 9 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *2 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 60 1 - - 1.4 9.5 31 35 1116 43 37 15 3.7 3.3 2.5 ±100 1 25 45 50 - V VGS=0V, ID=250μA VDS = VGS, ID=250μA S VDS =5V, ID=3A nA VGS=±20V μA VDS =48V, VGS =0 VDS =48V, VGS =0, Tj=125°C mΩ VGS =10V, ID=3A VGS =4.5V, ID=2A pF VDS=30V, VGS=0V, f=1MHz nC VDS=30V, VGS=10V, ID=6A MTN2310V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions td(ON) *1, 2 - 12 - tr *1, 2 td(OFF) *1, 2 - 18 37 - ns VDS=30V, ID=1A, VGS=10V, RGS=6Ω tf *1, 2 - 10 - Source-Drain Diode IS *1 - -6 ISM *3 - - 30 VSD *1 - 0.75 1.2 trr - 16 - Qrr - 9 - Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. A V ns nC IS=2A, VGS=0V IF=6A, dIF/dt=100A/μs Recommended Soldering Footprint MTN2310V8 unit : mm CYStek Product Specification CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 4/9 Typical Characteristics Typical Output Characteristics 30 10V,9V,8V,7V,6V,5V,4V 25 ID, Drain Current (A) 20 VGS=3V 15 10 5 VGS=2V 0 0 1 23 4 5 VDS, Drain-Source Voltage(V) 1000 Static Drain-Source On-State resistance vs Drain Current RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=2.5V 100 VGS=3V RDS(on), Static Drain-Source OnState Resistance(mΩ) 10 0.01 VGS=4.5V VGS=10V 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 160 140 ID=3A 120 100 80 60 40 20 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Normalized Static DrainSource On-State Resistance VSD, Source-Drain Voltage(V) BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1 0.8 Tj=25°C 0.6 Tj=150°C 0.4 0.2 0 2 46 8 IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture 2.4 2 VGS=10V, ID=3A 1.6 1.2 0.8 RDS(ON)@Tj=25°C : 31 mΩ typ. 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTN2310V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 5/9 Typical Characteristics(Cont.) 10000 Capacitance vs Drain-to-Source Voltage Threshold Voltage vs Junction Tempearture 1.4 1000 1.2 Ciss 1 ID=1mA VGS(th), Normalized Threshold Voltage Capacitance---(pF) GFS, Forward Transfer Admittance(S) 100 C oss 10 0.1 100 Crss 1 10 VDS, Drain-Source Voltage(V) 100 Forward Transfer Admittance vs Drai.


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