Document
CYStech Electronics Corp.
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTN2310V8
BVDSS ID
RDSON(TYP)
VGS=10V, ID=3A VGS=4.5V, ID=2A
60V 14A 31mΩ 35mΩ
Description
The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTN2310V8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device MTN2310V8-0-T1-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
MTN2310V8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
TC=25℃ TA=25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD Tj, Tstg
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 2/9
Limits
60 ±20 14
9 6 4.8 30 *1 14 2.3 *2
-55~+150
Unit V
A
W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
9 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS VGS(th) GFS *1 IGSS
IDSS
RDS(ON) *1
Dynamic Ciss Coss Crss
Qg *1, 2 Qgs *1, 2 Qgd *1, 2
60 1 -
-
1.4 9.5 31 35
1116 43 37 15 3.7 3.3
2.5 ±100 1 25 45 50
-
V
VGS=0V, ID=250μA VDS = VGS, ID=250μA
S VDS =5V, ID=3A
nA VGS=±20V
μA
VDS =48V, VGS =0 VDS =48V, VGS =0, Tj=125°C
mΩ
VGS =10V, ID=3A VGS =4.5V, ID=2A
pF VDS=30V, VGS=0V, f=1MHz
nC VDS=30V, VGS=10V, ID=6A
MTN2310V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
td(ON) *1, 2
- 12 -
tr *1, 2 td(OFF) *1, 2
-
18 37
-
ns VDS=30V, ID=1A, VGS=10V, RGS=6Ω
tf *1, 2
- 10 -
Source-Drain Diode
IS *1
- -6
ISM *3
- - 30
VSD *1
- 0.75 1.2
trr - 16 -
Qrr - 9 -
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
A
V ns nC
IS=2A, VGS=0V IF=6A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTN2310V8
unit : mm
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 4/9
Typical Characteristics
Typical Output Characteristics 30
10V,9V,8V,7V,6V,5V,4V 25
ID, Drain Current (A)
20 VGS=3V 15
10
5 VGS=2V
0 0 1 23 4 5 VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
RDS(on), Static Drain-Source On-State Resistance(mΩ)
VGS=2.5V 100
VGS=3V
RDS(on), Static Drain-Source OnState Resistance(mΩ)
10 0.01
VGS=4.5V
VGS=10V
0.1 1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
160 140 ID=3A
120
100
80
60
40
20
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(on), Normalized Static DrainSource On-State Resistance
VSD, Source-Drain Voltage(V)
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V 0.4
-75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage 1.2
VGS=0V 1
0.8
Tj=25°C
0.6
Tj=150°C 0.4
0.2 0
2 46 8 IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2 VGS=10V, ID=3A
1.6 1.2
0.8 RDS(ON)@Tj=25°C : 31 mΩ typ.
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTN2310V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture 1.4
1000
1.2 Ciss
1
ID=1mA
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
GFS, Forward Transfer Admittance(S)
100 C oss
10 0.1
100
Crss
1 10 VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drai.