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MTN4N60CFP Dataheets PDF



Part Number MTN4N60CFP
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN4N60CFP DatasheetMTN4N60CFP Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN4N60CFP BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2.4A 600V 4.0A 1.8Ω Description The MTN4N60CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-in.

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CYStech Electronics Corp. Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN4N60CFP BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2.4A 600V 4.0A 1.8Ω Description The MTN4N60CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Ordering Information Device MTN4N60CFP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN4N60CFP CYStek Product Specification Symbol CYStech Electronics Corp. Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 2/ 10 MTN4N60CFP Outline TO-220FP G:Gate D:Drain S:Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy @ L=1mH, IAS=4A, VDD=50V (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID ID IDM IAS EAS EAR TL Limits 600 ±30 4* 2.5* 16* 4 8 3.3 300 TPKG Pd Tj, Tstg 260 33 0.26 -55~+150 Note : 1.Pulse width limited by maximum junction temperature. 2. 100% tested by conditions of IAS=2A, VDD=50V, L=1mH, VG=10V, starting TJ=+25℃. Unit V A mJ °C W W/°C °C MTN4N60CFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 3/ 10 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 3.79 62.5 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS 600 2.0 - *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - Source-Drain Diode *VSD - *IS - *ISM - *trr - *Qrr - - - V VGS=0V, ID=250μA, Tj=25℃ 0.7 - V/°C Reference to 25°C, ID=250μA - 4.0 V VDS = VGS, ID=250μA 5 - S VDS =15V, ID=2.25A - ±100 nA VGS=±30V - 1 10 μA VDS =600V, VGS =0V VDS =480V, VGS =0V, Tj=125°C 1.8 2.3 Ω VGS =10V, ID=2.4A 13.2 3.2 4.0 9.6 8.6 26.8 10 539 59 16 - nC ID=4A, VDD=300V, VGS=10V ns VDD=300V, ID=4A, VGS=10V, RG=10Ω pF VGS=0V, VDS=25V, f=1MHz 0.84 1.5 -4 - 16 342 1.4 - V IS=4A, VGS=0V A ns μC VGS=0V, IF=4A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN4N60CFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 4/ 10 Typical Characteristics ID, Drain Current(A) 10 9 10V 9V 8 8V 7 7V 6 6V 5 4 3 2 1 0 0 Typical Output Characteristics 5.5V 5V 4.5V VGS=4V 10 20 30 40 VDS, Drain-Source Voltage(V) 50 Static Drain-Source On-State resistance vs Drain Current 5.0 VGS=10V 4.0 RDS(ON), Static Drain-Source OnState Resistance(Ω) 3.0 2.0 1.0 RDS(ON), Static Drain-Source On-State Resistance(Ω) 0.0 0.01 0.1 1 ID, Drain Current(A) 10 Static Drain-Source On-State Resistance vs Gate-Source Voltage 6 5 4 3 2 1 ID=2.4A Ta=25°C 0 0 24 68 VGS, Gate-Source Voltage(V) 10 IF, Forward Current(A) ID, Drain Current(A) RDS(ON), Normalized Static Drain-Source On-state Resistance Static Drain-Source On-resistance vs Ambient Temperature 3.0 2.5 2.0 1.5 1.0 ID=2.4A, 0.5 VGS=10V 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 10 9 8 7 6 5 4 3 2 1 0 0 Drain Current vs Gate-Source Voltage Ta=25°C VDS=30V VDS=10V 24 68 VGS, Gate-Source Voltage(V) 10 Forward Drain Current vs Source-Drain Voltage 100 VGS=0V 10 1 Ta=150°C 0.1 Ta=25°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V) 1.4 MTN4N60CFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 5/ 10 Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 10000 Brekdown Voltage vs Ambient Temperature 1.4 1000 Ciss 1.2 100 Coss 1.0 BVDSS, Normal.


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