Document
CYStech Electronics Corp.
Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN4N60CFP BVDSS ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2.4A
600V 4.0A 1.8Ω
Description
The MTN4N60CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package
Applications
• Open Framed Power Supply • Adapter • STB
Ordering Information
Device MTN4N60CFP-0-UB-S
Package
TO-220FP (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTN4N60CFP
CYStek Product Specification
Symbol
CYStech Electronics Corp.
Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 2/ 10
MTN4N60CFP
Outline
TO-220FP
G:Gate D:Drain S:Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy @ L=1mH, IAS=4A, VDD=50V
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS VGS ID ID IDM IAS
EAS
EAR
TL
Limits
600 ±30 4* 2.5* 16*
4
8
3.3
300
TPKG Pd
Tj, Tstg
260
33 0.26 -55~+150
Note : 1.Pulse width limited by maximum junction temperature. 2. 100% tested by conditions of IAS=2A, VDD=50V, L=1mH, VG=10V, starting TJ=+25℃.
Unit
V
A
mJ
°C W W/°C °C
MTN4N60CFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 3/ 10
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c Rth,j-a
Value 3.79 62.5
Unit °C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS ∆BVDSS/∆Tj
VGS(th) *GFS IGSS
IDSS
600
2.0 -
*RDS(ON)
-
Dynamic *Qg *Qgs *Qgd *td(ON) *tr
*td(OFF) *tf Ciss Coss Crss
-
Source-Drain Diode
*VSD
-
*IS -
*ISM
-
*trr -
*Qrr -
- - V VGS=0V, ID=250μA, Tj=25℃
0.7 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
5 - S VDS =15V, ID=2.25A
-
±100
nA VGS=±30V
-
1 10
μA
VDS =600V, VGS =0V VDS =480V, VGS =0V, Tj=125°C
1.8 2.3 Ω VGS =10V, ID=2.4A
13.2 3.2 4.0 9.6 8.6 26.8 10 539 59 16 -
nC ID=4A, VDD=300V, VGS=10V
ns
VDD=300V, ID=4A, VGS=10V, RG=10Ω
pF VGS=0V, VDS=25V, f=1MHz
0.84 1.5 -4 - 16
342 1.4 -
V IS=4A, VGS=0V
A
ns μC
VGS=0V, IF=4A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4N60CFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 4/ 10
Typical Characteristics
ID, Drain Current(A)
10 9 10V 9V 8 8V 7 7V 6 6V 5
4
3
2
1
0 0
Typical Output Characteristics
5.5V 5V
4.5V VGS=4V 10 20 30 40 VDS, Drain-Source Voltage(V)
50
Static Drain-Source On-State resistance vs Drain Current 5.0
VGS=10V 4.0
RDS(ON), Static Drain-Source OnState Resistance(Ω)
3.0
2.0
1.0
RDS(ON), Static Drain-Source On-State Resistance(Ω)
0.0 0.01
0.1 1 ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage 6
5
4
3
2
1 ID=2.4A Ta=25°C
0 0 24 68 VGS, Gate-Source Voltage(V)
10
IF, Forward Current(A)
ID, Drain Current(A)
RDS(ON), Normalized Static Drain-Source On-state Resistance
Static Drain-Source On-resistance vs Ambient Temperature 3.0
2.5
2.0
1.5
1.0 ID=2.4A,
0.5 VGS=10V
0.0 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C)
10 9 8 7 6 5 4 3 2 1 0
0
Drain Current vs Gate-Source Voltage
Ta=25°C
VDS=30V
VDS=10V
24 68 VGS, Gate-Source Voltage(V)
10
Forward Drain Current vs Source-Drain Voltage 100
VGS=0V 10
1 Ta=150°C
0.1
Ta=25°C
0.01
0.001 0
0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V)
1.4
MTN4N60CFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage 10000
Brekdown Voltage vs Ambient Temperature 1.4
1000
Ciss 1.2
100
Coss 1.0
BVDSS, Normal.