Document
CYStech Electronics Corp.
Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTN9N50BFP
BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=4.5A
500V 8.5A
5.4A 0.63Ω(typ)
Description
The MTN9N50BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package
Applications
• Ballast • Inverter
Ordering Information
Device MTN9N50BFP-0-UB-S
Package
TO-220FP (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products
Product name
MTN9N50BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 2/ 9
Symbol
Outline
MTN9N50BFP
TO-220FP
G:Gate D:Drain S:Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃)
Linear Derating Factor above 25℃
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS VGS
ID
IDM EAS IAR EAR
TL
PD
Tj, Tstg
Limits
500 ±30 8.5* 5.4* 34* 290
8 12.5
300
38.5 0.3 -55~+150
Unit
V
A
mJ A mJ °C W W/°C °C
Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature.
3. IAS=8A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25℃.
MTN9N50BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 3/ 9
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c
Rth,j-a
Value 3.25
62.5
Unit °C/W °C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS ∆BVDSS/∆Tj
VGS(th) *GFS IGSS
IDSS
500 2.0 -
-
*RDS(ON)
-
Dynamic *Qg *Qgs *Qgd *td(ON) *tr
*td(OFF) *tf Ciss Coss Crss
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
- - V VGS=0V, ID=250μA
0.6 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
8 - S VDS =15V, ID=4A
-
±100
nA VGS=±30V
-
1 25
μA
VDS =500V, VGS =0V VDS =400V, VGS =0V, Tj=125°C
0.63 0.85
Ω VGS =10V, ID=4.5A
26.8 5.6 11 14.4 11.8 52.2 14.2 890 103 45 -
nC ID=8A, VDD=250V, VGS=10V
ns
VDD=250V, ID=8A, VGS=10V, RG=10Ω
pF VGS=0V, VDS=25V, f=1MHz
-
8 32
A VD=VG=0, VS=1.3V
0.8 1.2
V IS=4.5A, VGS=0V
350 2.1
-
ns μC
VGS=0, IF=8A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN9N50BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 4/ 9
Typical Characteristics
ID, Drain Current(A)
20 18 16 14 12 10
8 6 4 2 0
0
Typical Output Characteristics
10V,9V,8V,7V
6V
VGS=4.5V
5.5V 5V
10 20 30 40 VDS, Drain-Source Voltage(V)
50
Static Drain-Source On-State resistance vs Drain Current 1200
1000
VGS=10V
RDS(ON), Normalized Static Drain-Source On-state Resistance
Static Drain-Source On-resistance vs Ambient Temperature 3.0
2.5
2.0
1.5
1.0 ID=4.5A,
0.5 VGS=10V
0.0 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C)
Drain Current vs Gate-Source Voltage
24 Ta=25°C
20
VDS=30V
ID, Drain Current(A)
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
800 16
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
600
400
200
0 0.01
0.1 1 ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source Voltage
2000
1800
1600
1400
1200
1000
800
600 400 ID=4.5A 200 Ta=25°C
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
IF, Forward Current(A)
12 VDS=10V
8
4
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
Forward Drain Current vs Source-Drain Voltage 100
VGS=0V 10
1 Ta=150°C
0.1
Ta=25°C
0.01
0.001 0
0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V)
1.4
MTN9N50BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 5/ 9
Typical Characteristics(cont.)
Capacitance vs Reverse Voltage 10000
Brekdown Voltage vs Ambient Temperature 1.4
BVDSS, Normalized Drain-Source Breakdown Voltage
Capa.