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MTN9N50BFP Dataheets PDF



Part Number MTN9N50BFP
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN9N50BFP DatasheetMTN9N50BFP Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTN9N50BFP BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=4.5A 500V 8.5A 5.4A 0.63Ω(typ) Description The MTN9N50BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally prefe.

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CYStech Electronics Corp. Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTN9N50BFP BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=4.5A 500V 8.5A 5.4A 0.63Ω(typ) Description The MTN9N50BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Ballast • Inverter Ordering Information Device MTN9N50BFP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN9N50BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 2/ 9 Symbol Outline MTN9N50BFP TO-220FP G:Gate D:Drain S:Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR TL PD Tj, Tstg Limits 500 ±30 8.5* 5.4* 34* 290 8 12.5 300 38.5 0.3 -55~+150 Unit V A mJ A mJ °C W W/°C °C Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. IAS=8A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25℃. MTN9N50BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 3/ 9 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 3.25 62.5 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS 500 2.0 - - *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - Source-Drain Diode *IS - *ISM - *VSD - *trr - *Qrr - - - V VGS=0V, ID=250μA 0.6 - V/°C Reference to 25°C, ID=250μA - 4.0 V VDS = VGS, ID=250μA 8 - S VDS =15V, ID=4A - ±100 nA VGS=±30V - 1 25 μA VDS =500V, VGS =0V VDS =400V, VGS =0V, Tj=125°C 0.63 0.85 Ω VGS =10V, ID=4.5A 26.8 5.6 11 14.4 11.8 52.2 14.2 890 103 45 - nC ID=8A, VDD=250V, VGS=10V ns VDD=250V, ID=8A, VGS=10V, RG=10Ω pF VGS=0V, VDS=25V, f=1MHz - 8 32 A VD=VG=0, VS=1.3V 0.8 1.2 V IS=4.5A, VGS=0V 350 2.1 - ns μC VGS=0, IF=8A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN9N50BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 4/ 9 Typical Characteristics ID, Drain Current(A) 20 18 16 14 12 10 8 6 4 2 0 0 Typical Output Characteristics 10V,9V,8V,7V 6V VGS=4.5V 5.5V 5V 10 20 30 40 VDS, Drain-Source Voltage(V) 50 Static Drain-Source On-State resistance vs Drain Current 1200 1000 VGS=10V RDS(ON), Normalized Static Drain-Source On-state Resistance Static Drain-Source On-resistance vs Ambient Temperature 3.0 2.5 2.0 1.5 1.0 ID=4.5A, 0.5 VGS=10V 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Drain Current vs Gate-Source Voltage 24 Ta=25°C 20 VDS=30V ID, Drain Current(A) RDS(ON), Static Drain-Source OnState Resistance(mΩ) 800 16 RDS(ON), Static Drain-Source On-State Resistance(mΩ) 600 400 200 0 0.01 0.1 1 ID, Drain Current(A) 10 Static Drain-Source On-State Resistance vs Gate-Source Voltage 2000 1800 1600 1400 1200 1000 800 600 400 ID=4.5A 200 Ta=25°C 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) IF, Forward Current(A) 12 VDS=10V 8 4 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) Forward Drain Current vs Source-Drain Voltage 100 VGS=0V 10 1 Ta=150°C 0.1 Ta=25°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V) 1.4 MTN9N50BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C074FP Issued Date : 2015.12.04 Revised Date : Page No. : 5/ 9 Typical Characteristics(cont.) Capacitance vs Reverse Voltage 10000 Brekdown Voltage vs Ambient Temperature 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage Capa.


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