MTP4409H8

CYStech Electronics Corp. Spec. No. : C808H8 Issued Date : 2013.09.02 Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTP4409H8 BVDSS ID RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-10A -30V -15A 7.3mΩ 11mΩ Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and Halogen-free package Symbol MTP4409H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：Source MTP4409H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.5mH, ID=-15A, RG=25Ω TC=25℃ Total Power Dissipation TC=100℃ TA=25°C TA=70°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM Tj, Tstg Spec. No. : C808H8 Issued Date : 2013.09.02 Revised Date : Page No. : 2/8 Limits -30 ±20 -63 -40 -15 *3 -12 *3 -200 *1,2 -15 56 50 20 2.5 *3 1.6 *3 -55~+150 Unit V A mJ W °C Thermal Data Parameter S...