MTP4409Q8

CYStech Electronics Corp. Spec. No. : C808Q8 Issued Date : 2012.04.03 Revised Date : 2012.11.02 Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4409Q8 BVDSS ID RDSON@VGS=-10V, ID=-15A RDSON@VGS=-4.5V, ID=-10A -30V -15A 7.7mΩ(typ) 11.4mΩ(typ) Description The MTP4409Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free package Equivalent Circuit MTP4409Q8 Outline SOP-8 G：Gate S：Source D：Drain MTP4409Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C808Q8 Issued Date : 2012.04.03 Revised Date : 2012.11.02 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=100 °C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-15A, RG=25Ω Power Dissipation (Note 2) TA=25 °C TA=100 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID ID IDM IAS EAS PD Tj ; Tstg Limits -30 ±20 -15 -9.5 -160 -15 11.25 3.1 1.2 -55~+150 Note : 1.Pulse width limited by maxim...