MTP4411M3

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET MTP4411M3 BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V, ID=-3A -30V -5A 40mΩ (typ.) 58mΩ (typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol MTP4411M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) ID -5 ID -4 IDM -20 *1, 3 Pd 1.5 *2 Linear Derating Factor 0.01 Operating Junction and Storage Temperature Tj, Tstg -55~+150 Note : *1. Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board; 250 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2% Unit V V A A A W W/°C °C MTP4411M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 2/8 Thermal Data Parameter Symbol Value Thermal Resistance, Junction-to-case, max Rth,j-c 17 Thermal Resistance, Junction-to-ambient, max Rth,j-a 83.3 (Note) Note : When mounted on a 1 in2 pad of 2 oz. copper; 250 °C/W when mounted on min. copper pad Unit °C/W °C/W Electrical Characteristics (Tj=25°C, unless o...