MTP4413Q8

CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4413Q8 Spec. No. : C398Q8 Issued Date : 2007.10.12 Revised Date : Page No. : 1/6 Description The MTP4413Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)=30mΩ@VGS=-10V, ID=-7A RDS(ON)=40mΩ@VGS=-4.5V, ID=-4A Simple drive requirement Low on-resistance Fast switching speed Pb-free package Equivalent Circuit MTP4413Q8 Outline SOP-8 G：Gate S：Source D：Drain MTP4413Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C398Q8 Issued Date : 2007.10.12 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @ TA=25 °C (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 3) Symbol VDS VGS ID ID IDM Pd Tj, Tstg Rth,j-a Limits -20 ±20 -7.8 -6.2 -30 2.5 0.02 -55~+150 50 Note : 1.Pulse Width ≤300μs, Duty Cycle≤2%. 2.Pulse width limited by maximum junction temperature. 3.Surface mounted on 1 in² copper pad o...