P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C107Q8 Issued Date : 2015.08.14 Revised Date : 2015.08.18 Page No. : 1/9
P-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C107Q8 Issued Date : 2015.08.14 Revised Date : 2015.08.18 Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTP4435AQ8 BVDSS ID@ VGS=-10V, TA=25°C
RDSON @VGS=-10V, ID=-8A
RDSON @VGS=-4.5V, ID=-5A
-30V -12.3A 12.3mΩ(typ.) 17.5mΩ(typ.)
Features
Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating package
Equivalent Circuit
MTP4435AQ8
Outline
SOP-8
G:Gate S:Source D:Drain
Ordering Information
Device MTP4435AQ8-0-T3-G
Package
Shipping
SOP-8 (Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTP4435AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C107Q8 Issued Date : 2015.08.14 Revised Date : 2015.08.18 Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=-12.3A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25℃ TA=70℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM IAS EAS EAR
PD
Tj, Tstg
Limits
-30 ±25 -12.3 -9.8 -50 *1 -12.3 75.6 2.5 *2 3.1 *3 2 *3 -55~+150
Unit...
Similar Datasheet