MTP4463Q8

CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4463Q8 BVDSS ID RDSON@VGS=-4.5V, ID=-14A RDSON@VGS=-2.5V, ID=-10A -20V -14A 8.8mΩ(typ) 12.8mΩ(typ) Description The MTP4463Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free package Equivalent Circuit MTP4463Q8 Outline SOP-8 G：Gate S：Source D：Drain MTP4463Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 1) Power Dissipation (Note 2) TA=25 °C TA=70 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID ID IDM PD Tj ; Tstg Limits -20 ±12 -14 -11.2 -60 3.1 2 -55~+150 Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Unit V V A A A W W °C...