ME4425-G

P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4425 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4425/ME4425-G FEATURES ● RDS(ON)≦14mΩ@VGS=-10V ● RDS(ON)≦19mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter e Ordering Information: ME4425 (Pb-free) ME4425-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche Energy with Single Pulse(L=0.1mH) Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* Symbol VDS VGS ID IDM IAR EAS PD TJ RθJA Maximum Ratings -30 ±20 -10.6 -8.5 -42 -44 96.8 2.5 1.6 -55 to 150 50 *The device mounted...