Document
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMA06N03AN
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
±20 80 50 170 53 140 40 69 27 ‐55 to 150
V A
mJ W °C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N‐CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
1.8 °C / W
75
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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMA06N03AN
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 30A
VGS = 5V, ID = 24A VDS = 5V, ID = 24A
DYNAMIC
25
V
1 1.5 3
±100 nA
1 A
25
80
A
5.3
6 mΩ
7.6 9.5
25 S
Input Capacitance Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance Total Gate Charge1,2
Gate‐Source Charge1,2 Gate‐Drain Charge1,2 Turn‐On Delay Time1,2 Rise Time1,2 Turn‐Off Delay Time1,2 Fall Time1,2
Rg Qg(VGS=10V) Qg(VGS=5V)
Qgs Qgd td(on) tr td(off) tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 10V, ID = 30A
VDS = 15V, ID = 25A, VGS = 10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current Pulsed Current3 Forward Voltage1
IS
ISM
VSD
IF = IS, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
1800 480 220 1.2 34.5 22 4.8 12.5 20 15 50 20
80 170 1.3 32 200 12
pF Ω nC
nS
A V nS A nC
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2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMA06N03AN for DPAK (TO‐252)
A06
N03N
A06N03N: Device Name
ABCDEFG
ABCDEFG: Date Code
2013/8/21
EMA06N03AN p.3
EMA06N03AN
TYPICAL CHARACTERISTICS
On‐Region Characteristic
100
10V 7V 5V
4.5V
80
60
I D ,Drain‐Source Current( A )
40
20
R D S ( O N ) ,Normalized
Drain‐Source On‐Resistance
On‐ Resistance Variation with Drain Current and Gate Voltage
3.0
2.5
2.0 VG S = 4.5V
1.5
1.0
5V
5.5V
6V 7V 10V
0
0.5
0 0.5
1 1.5
2 2.5
3
0 20 40 60 80 100
VD S ,Drain‐Source Voltage( V )
I D ,Drain Current( A )
R ,On‐Resistance(ohm) DS(ON)
R ,Normalized DS(ON)
Drain‐Source On‐Resistance
1.8 On‐ Resistance Variation with Temperature I D = 30A
VG S = 10V 1.6
1.4 1.2 1.0
0.025
On‐Resistance Variation with Gate‐Source Voltage
ID = 15A
0.020
0.015
0.010
TA = 125° C
0.8
0.005
TA = 25° C
0.6 ‐50
‐25
0 25 50 75 100 125 150 T j ,Junction Tem p erature(°C )
0 2
468 VG S ,Gate‐SourceVoltage( V )
10
I S ,REVERSE DRAIN CURRENT( A )
TRANSFER CHARACTERISTICS
BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE
100
60
V D S = 10V
T A = ‐55 ° C
VG S = 0V
80
25 ° C
10
TA = 125°C
125 ° C
1
I D ,DRAIN CURRENT( A )
60
40
25°C 0.1
‐55°C 0.01
20
0.001
0 0.0001
012
3 45
0 0.2
0.4 0.6
0.8
1.0 1.2 1.4
V G S ,GATE TO SOURCE VOLTAGE
VS D ,BODY DIODE FORWARD VOLTAGE( V )
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G A T E C H A R G E C H A R A C T E R IS T IC S 12 ID = 3 0 A
10
VGS ,GATE-SOURCE VOLTAGE ( V )
8
6
4
V DS =5V 15V
10V
2
0
0 15 30
45
Q g ,G A T E C H A R G E ( n C )
I D ,DRAIN CURRENT( A )
300
200
100
R d s ( o n ) Limit
50
20
10
5
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s 1ms 10ms D1C00ms
2
1
0.5
0.5
VG S = 10V RSIθ N J C G= L1E. 8P° UC/LWSE Tc = 25° C 1 10
VD S .