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6MBP75RTB060 Dataheets PDF



Part Number 6MBP75RTB060
Manufacturers Fuji Electric
Logo Fuji Electric
Description IPM-R3 series IGBT
Datasheet 6MBP75RTB060 Datasheet6MBP75RTB060 Datasheet (PDF)

6MBP75RTB060 IPM-R3 series 600V / 75A 6 in one-package Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Symbol DC bus voltage DC b.

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6MBP75RTB060 IPM-R3 series 600V / 75A 6 in one-package Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Symbol DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current DC 1ms Duty=74.9% Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) VDC VDC(surge) VSC VCES *1 IC ICP -IC *2 PC *3 Tj VCC *4 Vin *5 Iin VALM *6 IALM *7 Tstg Topr Viso *8 Rating Unit Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -40 -20 - 450 500 400 600 75 150 75 198 150 20 Vcc+0.5 3 Vcc 20 125 100 AC2.5 3.5 *9 3.5 *9 V V V V A A A W °C V V mA V mA °C °C kV N·m N·m Fig.1 Measurement of case temperature *1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W. *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=74.9% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *6 : VALM shall be spplied to the voltage between terminal No. 16 and 10. *7 : IALM shall be applied to the input current to terminal No. 16. *8 : 50Hz/60Hz sine wave 1 minute. *9 : Recommendable Value : 2.5 to 3.0 N·m Free Datasheet http://www.datasheet4u.com/ 6MBP75RTB060 Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Symbol Condition Min. INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF VCE=600V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip - Turn-on time ton VDC=300V,Tj=125°C 1.2 Turn-off time toff IC=75A Fig.1, Fig.6 - Reverse recovery time trr VDC=300V, IC=75A Fig.1, Fig.6 - Maximum Avalanche Energy PAV Internal wiring inductance=50nH 40 (A non-repetition) Main circuit wiring inductace=54nH Typ. 2.0 1.6 - IGBT-IPM Max. 1.0 2.4 2.6 3.6 0.3 - Unit mA V V µs mJ Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Alarm signal hold time VZ tALM Limiting resistor for alarm RALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Min. Typ. Max. Unit - - 18 mA - - 65 mA 1.00 1.35 1.70 V 1.25 1.60 1.95 V - 8.0 - V 1.1 - - ms - 2.0 - ms - - 4.0 ms 1425 1500 1575 ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH TCOH TCH VUV VH Condition Tj=125°C Tj=125°C Tj=125°C Fig.4 surface of IGBT chips VDC=0V, Ic=0A, Case temperature Min. 113 150 110 11.0 0.2 Typ. 5 - 20 - 20 0.5 Max. Unit - -A - µs 8 µs - - °C - °C 125 °C 12.5 V - Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance INV Case to fin thermal resistance with compound IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Max. Unit 0.63 °C/W 0.855 °C/W - °C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC - Weight Item Weight *9 : (For 1 device, Case is under the device) Symbol Wt Min. ±2.0 Typ. - ±5.0 - Max. - Unit kV - kV Min. - 13.5 2.5 Typ. - 15.0 - Max. 400 16.5 3.0 Unit V V Nm Min. - Typ. Max. 450 - Unit g 6MBP75RTB060 IGBT-IPM Vin Vin(th) Ic trr 90% ton on 90% 50% Vin(th) 10% toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM) on Gate on off Gate off Fault (Inside IPM) normal off on /ALM alarm tALM>Max. tALM>Max. Fault : Over-current, Over-heat or Under-voltage.


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