MTN10N60BE3

CYStech Electronics Corp. Spec. No. : C126E3 Issued Date : 2015.12.25 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN10N60BE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=6A 600V 10A 0.59Ω Description The MTN10N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Power Factor Correction LCD TV Power Full and Half Bridge Power Ordering Information Device MTN10N60BE3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN10N60BE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C126E3 Issued Date : 2015.12.25 Revised Date : Page No. : 2/ 10 Symbol MTN10N60BE3 Outline TO-220 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain...