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MTN1012C3 Dataheets PDF



Part Number MTN1012C3
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode MOSFET
Datasheet MTN1012C3 DatasheetMTN1012C3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET MTN1012C3 BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V,ID=400mA RDSON@VGS=1.8V,ID=350mA Features • Simple drive requirement • Small package outline • Pb-free package 20V 560mA 320mΩ(typ) 510mΩ(typ) 980mΩ(typ) Symbol MTN1012C3 Outline SOT-523 D G:Gate S:Source D:Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage.

  MTN1012C3   MTN1012C3


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CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET MTN1012C3 BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V,ID=400mA RDSON@VGS=1.8V,ID=350mA Features • Simple drive requirement • Small package outline • Pb-free package 20V 560mA 320mΩ(typ) 510mΩ(typ) 980mΩ(typ) Symbol MTN1012C3 Outline SOT-523 D G:Gate S:Source D:Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) TA=25℃ TA=85℃ ESD susceptibility Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board. 3. Human body model, 1.5kΩ in series with 100pF Limits 20 ±8 560 400 2.5 150 80 2000 (Note 4) -55~+150 Unit V mA A mW V °C MTN1012C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 2/8 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Limit 833 Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS 20 0.5 - - *RDS(ON) - *GFS - Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd - Source-Drain Diode *VSD - Typ. Max. -0.02 0.92 1.2 - ±10 -1 - 10 320 450 510 700 980 1200 1- 60 14 9 5 5 24 18 0.76 0.074 0.27 0.8 - 1.2 Unit Test Conditions V V/°C V μA mΩ S VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VDS=16V, VGS=0 (Tj=70°C) VGS=4.5V, ID=600mA VGS=2.5V, ID=500mA VGS=1.8V, ID=350mA VDS=10V, ID=400mA pF VDS=10V, VGS=0, f=1MHz ns VDS=10V, ID=200mA, VGS=4.5V RG=10Ω nC VDS=10V, ID=250mA, VGS=4.5V V VGS=0V, IS=150mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN1012C3 Package SOT-523 (Pb-free package) Shipping 3000 pcs / Tape & Reel Marking QT MTN1012C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 3/8 Typical Characteristics ID, Drain Current (A) RDS(on), Static Drain-Source On-State Resistance(mΩ) Typical Output Characteristics 3.0 5V, 4.5V, 4V, 3.5V 2.5 VGS=3V 2.0 VGS=2.5V 1.5 1.0 VGS=2V 0.5 0.0 0 VGS=1V VGS=1.5V 1 23 4 VDS, Drain-Source Voltage(V) 5 Static Drain-Source On-State resistance vs Drain Current 1600 1400 1200 VGS=1.8V 1000 VGS=2.5V 800 600 400 200 VGS=4.5V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, Drain Current(A) 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 900 800 700 600 500 ID=600mA 400 ID=350mA 300 200 100 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Normalized Static DrainSource On-State Resistance VSD, Source-Drain Voltage(V) BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 ID=250μA, VGS=0V 1.2 1 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1 VGS=0V 0.8 Tj=25°C 0.6 Tj=150°C 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) Drain-Source On-State Resistance vs Junction Tempearture 1.6 1.4 1.2 VGS=4.5V, ID=600mA 1 0.8 0.6 -60 VGS=1.8V, ID=350mA VGS=2.5V, ID=400mA -20 20 60 100 140 Tj, Junction Temperature(°C) 180 RDS(ON), Static Drain-Source OnState Resistance(mΩ) MTN1012C3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 4/8 Capacitance---(pF) Power (W) Capacitance vs Drain-to-Source Voltage 100 Ciss C oss 10 Crss 1 0.1 10 8 6 1 10 VDS, Drain-Source Voltage(V) 100 Single Pulse Power Rating, Junction to Ambient (Note on page 2) TJ(MAX)=150°C TA=25°C RθJA=833°C/W 4 2 0 0.001 0.01 0.1 1 10 100 Pulse Width(s) Maximum Safe Operating Area 10 1 0.1 TA=25°C, Tj=150°C, 0.01 VGS=4.5V, RθJA=833°C/W Single Pulse 100μs 1ms 10ms 100m DC 0.001 0.01 0.1 1 10 VDS, Drain-Source Voltage(V) 100 ID, Maximum Drain Current(A) VGS, Gate-Source Voltage(V) VGS(th), Normalized Threshold Voltage Threshold Voltage vs Junction Tempearture 1.6 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) Gate Charge Characteristics 10 8 6 4 VDS=10V ID=250mA 2 0 0 0.5 1 1.5 2 Qg, Total Gate Charge(nC) Maximum Drain Current vs JunctionTemperature 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TA=25°C, VGS=4.5V, RθJA=833°C/W 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Drain Current (A) MTN1012C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised.


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