Document
CYStech Electronics Corp.
Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 1/8
20V N-CHANNEL Enhancement Mode MOSFET
MTN1012C3 BVDSS ID RDSON@VGS=4.5V, ID=600mA
RDSON@VGS=2.5V,ID=400mA
RDSON@VGS=1.8V,ID=350mA
Features
• Simple drive requirement • Small package outline • Pb-free package
20V 560mA 320mΩ(typ)
510mΩ(typ)
980mΩ(typ)
Symbol
MTN1012C3
Outline
SOT-523 D
G:Gate S:Source D:Drain
GS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation
(Note 3)
TA=25℃ TA=85℃
ESD susceptibility
Operating Junction and Storage Temperature
Symbol VDS VGS ID IDM PD
Tj, Tstg
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board.
3. Human body model, 1.5kΩ in series with 100pF
Limits 20 ±8 560 400 2.5 150
80
2000 (Note 4) -55~+150
Unit V
mA A mW
V °C
MTN1012C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 2/8
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted)
Symbol Rth,ja
Limit 833
Unit °C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min.
Static BVDSS
∆BVDSS/∆Tj VGS(th) IGSS
IDSS
20 0.5
-
-
*RDS(ON)
-
*GFS
-
Dynamic
Ciss Coss Crss td(ON)
tr td(OFF)
tf Qg Qgs Qgd
-
Source-Drain Diode
*VSD
-
Typ. Max.
-0.02 0.92 1.2
- ±10 -1 - 10 320 450
510 700
980 1200
1-
60 14 9 5 5 24 18 0.76 0.074 0.27
0.8
-
1.2
Unit Test Conditions
V V/°C
V μA
mΩ
S
VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VDS=16V, VGS=0 (Tj=70°C) VGS=4.5V, ID=600mA
VGS=2.5V, ID=500mA
VGS=1.8V, ID=350mA
VDS=10V, ID=400mA
pF VDS=10V, VGS=0, f=1MHz
ns
VDS=10V, ID=200mA, VGS=4.5V RG=10Ω
nC VDS=10V, ID=250mA, VGS=4.5V
V VGS=0V, IS=150mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTN1012C3
Package
SOT-523 (Pb-free package)
Shipping 3000 pcs / Tape & Reel
Marking QT
MTN1012C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 3/8
Typical Characteristics
ID, Drain Current (A)
RDS(on), Static Drain-Source On-State Resistance(mΩ)
Typical Output Characteristics
3.0 5V, 4.5V, 4V, 3.5V
2.5 VGS=3V
2.0 VGS=2.5V
1.5
1.0 VGS=2V
0.5
0.0 0
VGS=1V
VGS=1.5V
1 23 4 VDS, Drain-Source Voltage(V)
5
Static Drain-Source On-State resistance vs Drain Current 1600
1400 1200 VGS=1.8V
1000
VGS=2.5V
800
600
400
200 VGS=4.5V
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, Drain Current(A)
1
Static Drain-Source On-State Resistance vs Gate-Source Voltage
1000
900 800
700 600
500 ID=600mA
400 ID=350mA 300
200 100
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(ON), Normalized Static DrainSource On-State Resistance
VSD, Source-Drain Voltage(V)
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature
1.4 ID=250μA, VGS=0V
1.2
1
0.8
0.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage 1
VGS=0V 0.8
Tj=25°C
0.6 Tj=150°C 0.4
0.2
0 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
1.6
1.4
1.2 VGS=4.5V, ID=600mA
1
0.8
0.6 -60
VGS=1.8V, ID=350mA VGS=2.5V, ID=400mA
-20 20
60 100 140
Tj, Junction Temperature(°C)
180
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
MTN1012C3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 4/8
Capacitance---(pF)
Power (W)
Capacitance vs Drain-to-Source Voltage 100
Ciss
C oss 10
Crss
1 0.1
10 8 6
1 10 VDS, Drain-Source Voltage(V)
100
Single Pulse Power Rating, Junction to Ambient (Note on page 2)
TJ(MAX)=150°C TA=25°C RθJA=833°C/W
4
2
0
0.001 0.01
0.1
1
10 100
Pulse Width(s)
Maximum Safe Operating Area 10
1
0.1
TA=25°C, Tj=150°C, 0.01 VGS=4.5V, RθJA=833°C/W
Single Pulse
100μs
1ms 10ms 100m DC
0.001 0.01
0.1 1 10 VDS, Drain-Source Voltage(V)
100
ID, Maximum Drain Current(A)
VGS, Gate-Source Voltage(V)
VGS(th), Normalized Threshold Voltage
Threshold Voltage vs Junction Tempearture 1.6 1.4 ID=250μA
1.2
1
0.8
0.6
0.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4 VDS=10V ID=250mA
2
0 0 0.5 1 1.5 2 Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TA=25°C, VGS=4.5V, RθJA=833°C/W
0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
ID, Drain Current (A)
MTN1012C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C814C3 Issued Date : 2012.05.15 Revised.