MTN1012ZC3

CYStech Electronics Corp. Spec. No. : C588C3 Issued Date : 2011.01.05 Revised Date : Page No. : 1/7 ESD protected N-CHANNEL Enhancement Mode MOSFET MTN1012ZC3 BVDSS 20V ID 0.7A 300mΩ@4.5V/0.6A Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package RDSON(TYP) 340mΩ@2.5V/0.5A 420mΩ@1.8V/0.4A Symbol MTN1012ZC3 Outline SOT-523 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Total Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% Symbol BVDSS VGS ID IDM PD Tj ; Tstg Rth,ja Limits 20 ±12 0.7 0.4 1 *1 270 160 -55~+150 463 Unit V V A A mW °C °C/W MTN1012ZC3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C588C3 Issued Date : 2011.01.05 Revised Date : Page No. : 2/7 Electrical Characteristics (Ta=25°C) Symbol Min. Static BVDSS VGS(th) IGSS IDSS 20 0.3 - ID(ON) RDS(ON) 0.7 - GFS - Dynamic Ciss Coss Crss Qg Qgs Qgd td(ON) tr td(OFF) tf - Source-Drain Diode *VSD - Typ. Max. Unit Test Conditions - - V VGS=0, ID=100μA - 0.8 V VDS=VGS, ID=250μA - ±1 mA VGS=±12V, VDS=0 - 1 5 μA VDS=16V, VGS=0 VDS=16V, VGS=0, TJ=85°C - - A VDS≧5V, VGS=4.5V 300 360 VGS=4.5V, ID=600mA 340 420 mΩ VGS=2.5V, ID=500mA 420 ...