MTN10N40E3

CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N40E3 BVDSS : 400V RDS(ON) : 0.47Ω(typ.) ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Switching Mode Power Supply Symbol MTN10N40E3 Outline TO-220 G：Gate D：Drain S：Source MTN10N40E3 GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID ID IDM EAS IAR EAR dv/dt...