CYStech Electronics Corp.
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN10N60E3
BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A
Description
The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
Applications
• Adaptor • LCD Panel Power • TV Main Power • SMPS Standby Power
Symbol
MTN10N60E3
Outline
TO-220
G:Gate D:Drain S:Source
MTN10N60E3
GDS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 2/9
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Drain-Source Voltage (Note 1)
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Continuous Drain Current @TC=100°C
ID
Pulsed Drain Current @ VGS=10V (Note 2)
IDM
Single Pulse Avalanche Energy @ L=10mH, ID=10 Amps, VDD=50V
EAS
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds
TL
Maximum Temperature for Soldering @ Package Body for 10 seconds
TPKG
Total Power Dissipation (TC=25℃)
Pd
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. TJ=+25℃ to +150℃.
*2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt<100A/μs, VDD