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MTN10N60E3 Dataheets PDF



Part Number MTN10N60E3
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN10N60E3 DatasheetMTN10N60E3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N60E3 BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial application.

  MTN10N60E3   MTN10N60E3



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CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N60E3 BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Adaptor • LCD Panel Power • TV Main Power • SMPS Standby Power Symbol MTN10N60E3 Outline TO-220 G:Gate D:Drain S:Source MTN10N60E3 GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Symbol Drain-Source Voltage (Note 1) VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current @TC=100°C ID Pulsed Drain Current @ VGS=10V (Note 2) IDM Single Pulse Avalanche Energy @ L=10mH, ID=10 Amps, VDD=50V EAS Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt (Note 3) dv/dt Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG Total Power Dissipation (TC=25℃) Pd Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg Note : *1. TJ=+25℃ to +150℃. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt<100A/μs, VDD


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