MTN10N60FP

CYStech Electronics Corp. Spec. No. : C406FP Issued Date : 2008.12.02 Revised Date :2009.04.20 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N60FP BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150℃ Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Power Factor Correction LCD TV Power Full and Half Bridge Power Symbol MTN10N60FP Outline TO-220FP G：Gate D：Drain S：Source MTN10N60FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406FP Issued Date : 2008.12.02 Revised Date :2009.04.20 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=4.3mH, ID=10 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Ope...