DatasheetsPDF.com

MTN10N65BE3

CYStech

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C114E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10 N-Channel Enhance...


CYStech

MTN10N65BE3

File Download Download MTN10N65BE3 Datasheet


Description
CYStech Electronics Corp. Spec. No. : C114E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN10N65BE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=6A 650V 10A 0.54Ω Description The MTN10N65BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Open Framed Power Supply Adapter STB Ordering Information Device MTN10N65BE3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN10N65BE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C114E3 Issued Date : 2016.03.21 Revised Date : Page No. : 2/10 Symbol MTN10N65BE3 Outline TO-220 G:Gate D:Drain S:Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)