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3N80C Dataheets PDF



Part Number 3N80C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description FQP3N80C
Datasheet 3N80C Datasheet3N80C Datasheet (PDF)

FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-sta.

  3N80C   3N80C


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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GDS TO-220 GDS TO-220F G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max FQP3N80C FQPF3N80C 800 3 3* 1.9 1.9 * 12 12 *  30 320 3 10.7 4.5 107 39 0.85 0.31 -55 to +150 300 FQP3N80C 1.17 62.5 FQPF3N80C 3.2 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2003 Fairchild Semiconductor Corporation FQP3N80C / FQPF3N80C Rev. C2 1 www.fairchildsemi.com FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQP3N80C FQPF3N80C Top Mark FQP3N80C FQPF3N80C Package TO-220 TO-220F Packing Method Tube Tube Reel Size Tube Tube Tape Width N/A N/A Quantity 50 units 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter  Off Characteristics Test Conditions BVDSS BVDSS / TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR Gate-Body Leakage Current, Reverse  On Characteristics VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25°C VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance  Dynamic Characteristics VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.5 A VDS = 50 V, ID = 1.5 A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance  Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 3 A, RG = 25  VDS = 640 V, ID = 3 A, VGS = 10 V (Note 4) (Note 4) Min 800 ------ 3.0 --- ---- -------- Typ Max Unit -- -- V 1 -- V/°C -- 10 A -- 100 A -- 100 nA -- -100 nA -- 5.0 4.0 4.8 3 -- V  S 543 705 54 70 5.5 7.5 pF pF pF 15 43.5 22.5 32 13 3.4 5.8 40 95 55 75 16.5 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.0 A trr Reverse Recovery Time VGS = 0 V, IS = 3.0 A, Qrr Reverse Recovery Charge dIF / dt = 100 A/s Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 67 mH, IAS = 3.0 A, VDD = 50 V, RG = 25 starting TJ = 25°C. 3. ISD  3 A, di/dt  200 A/s, VDD  BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. -- -- 3.0 A -- -- 12 A -- -- 1.4 V -- 642 -- ns -- 4.0 -- C ©2003 Fairchild Semiconductor Corporation FQP3N80C / FQPF3N80C Rev. C2 2 www.fairchildsemi.com FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET Typical Characteristics ID, Drain Current [A] Drain-SouRrDcS(eON)O[n-ΩR],esistance 101 Top : 15.V0GVS 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 100 Bottom: 5.5V 10-1 10-2 10-1 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 100 101 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics 10 VGS = 10V 8 VGS = 20V 6 4 ※ Note : TJ = 25℃ 2 02468 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 800 CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted) Ciss 600 400 Coss ※ Notes : 1. 2. Vf =GS1=M0HVz 200 Crss 0 10-1 100 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Capacitance [pF] VGS, Gate-Source Voltage [V] IDR, Rever.


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