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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
• Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested
June 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
GDS
TO-220
GDS TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC RJA
Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max
FQP3N80C
FQPF3N80C
800
3 3*
1.9 1.9 *
12 12 *
30
320
3
10.7
4.5
107 39
0.85 0.31
-55 to +150
300
FQP3N80C 1.17 62.5
FQPF3N80C 3.2 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Unit °C/W °C/W
©2003 Fairchild Semiconductor Corporation FQP3N80C / FQPF3N80C Rev. C2
1
www.fairchildsemi.com
FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQP3N80C FQPF3N80C
Top Mark FQP3N80C FQPF3N80C
Package TO-220 TO-220F
Packing Method Tube Tube
Reel Size Tube Tube
Tape Width N/A N/A
Quantity 50 units 50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
BVDSS
BVDSS / TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25°C
VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.5 A VDS = 50 V, ID = 1.5 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 400 V, ID = 3 A, RG = 25
VDS = 640 V, ID = 3 A, VGS = 10 V
(Note 4) (Note 4)
Min
800 ------
3.0 ---
----
--------
Typ Max Unit
-- -- V
1 -- V/°C
-- 10 A
-- 100 A
-- 100 nA
--
-100
nA
-- 5.0 4.0 4.8 3 --
V S
543 705 54 70 5.5 7.5
pF pF pF
15 43.5 22.5 32 13 3.4 5.8
40 95 55 75 16.5 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 3.0 A
trr Reverse Recovery Time
VGS = 0 V, IS = 3.0 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/s
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 67 mH, IAS = 3.0 A, VDD = 50 V, RG = 25 starting TJ = 25°C. 3. ISD 3 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature.
-- -- 3.0 A -- -- 12 A -- -- 1.4 V -- 642 -- ns -- 4.0 -- C
©2003 Fairchild Semiconductor Corporation FQP3N80C / FQPF3N80C Rev. C2
2
www.fairchildsemi.com
FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
Typical Characteristics
ID, Drain Current [A]
Drain-SouRrDcS(eON)O[n-ΩR],esistance
101 Top :
15.V0GVS
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100 Bottom: 5.5V
10-1
10-2 10-1
※ Notes : 1. 250μs Pulse Test 2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
VGS = 10V 8
VGS = 20V 6
4
※ Note : TJ = 25℃ 2
02468
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
800
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Ciss
600
400 Coss
※ Notes :
1. 2.
Vf =GS1=M0HVz
200
Crss
0 10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Capacitance [pF]
VGS, Gate-Source Voltage [V]
IDR, Rever.