SW3N80C

SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V  Low Gate Charge (Typ 12.5nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Industrial power，LED,Adapter 1 23 1 23 2 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 800V ID : 3.0A RDS(ON) : 3.9Ω 2 1 3 Order Codes Item Sales Type 1 SW F 3N80C 2 SW I 3N80C 3 SW D 3N80C Marking SW3N80C SW3N80C SW3N80C Package TO-220F TO-251 TO-252 Packaging TUBE TUBE REEL Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt Total power dissipation (@TC=25oC) Derating factor above 25oC (note 3) Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. Value TO-220F TO-251/TO-252 800 3.0* 1.9* 12 ±30 260 20 5 18.4 147 0.15 1.1 -55 ~ + 150 Unit V A A A V mJ mJ V/ns W W/oC oC 300 oC *. Dr...