SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES ᴌA Collector Current is Large. ᴌCollector Saturation Voltag...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES ᴌA Collector Current is Large. ᴌCollector Saturation Voltage is low.
: VCE(sat)ᴪ-250mV at IC=-200mA/IB=-10mA. ᴌComplementary to KTC4072E.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS.
SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg
RATING -15 -12 -6 -500 -1 100 150
-55ᴕ150
UNIT V V V mA A mW ᴱ ᴱ
A G H
KTA2012E
EPITAXIAL PLANAR
PNP TRANSISTOR
C
E
B
DIM MILLIMETERS
2
D
A 1.60+_ 0.10 B 0.85+_ 0.10
13
C 0.70+_ 0.10 D 0.27+0.10/-0.05
E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
J
1. EMITTER 2. BASE 3. COLLECTOR
ESM
Marking
Type Name
SZ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency
ICBO V(BR)CBO V(BR)CEO V(BR)EBO
hFE VCE(sat)
fT
Collector Output Capacitance
Cob
TEST CONDITION VCB=-15V, IE=0 IC=-10ỌA IC=-1mA IE=-10ỌA VCE=-2V, IC=-10mA IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, fT=100MHz VCB=-10V, IE=0, f=1MHz
MIN. -
-15 -12 -6 270
-
TYP. -
-100 260 6.5
MAX. -100
680 -250 -
UNIT nA V V V mV MHz pF
2002. 2. 20
Revision No : 1
1/3
DC CURRENT GAIN h FE
KTA2012E
hFE - I C
1K Ta=125 C
500 Ta=25 C 300 Ta=-40 C
...