KTA501E

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC * Tj Storage Temperature Range * Total Rating Tstg RATING -50 -50 -5 -150 -30 200 150 -55 150 UNIT V V V mA mA mW H A A1 CC KTA501E EPITAXIAL PLANAR PNP TRANSISTOR B B1 1 5 DIM MILLIMETERS A 1.6 +_ 0.05 A1 1.0+_ 0.05 2 B 1.6+_ 0.05 B1 1.2+_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 P P J 0.12+_ 0.05 P5 1. Q1 BASE 2. Q1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q1 COLLECTOR TESV EQUIVALENT CIRCUIT (TOP VIEW) 54 JD Q1 Q2 12 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(sat) fT Cob VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 Note : hFE Classification Y(4):120 240, GR(6):200 400 Marking MIN. - 120 80 - TYP. - -0.1 4 1.0 MAX. UNIT. -0.1 -0.1 400 -0.30 V 7 10 5...