KTA1268

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES ᴌLow Noise. : NF=3dB(Typ.), Rg=100ή, VCE=-6V, IC=-100ỌA, f=1kHz : NF=0.5dB(Typ.), Rg=1kή, VCE=-6V, IC=-100ỌA, f=1kHz. ᴌHigh DC Current Gain : hFE=200ᴕ700. ᴌHigh Voltage : VCEO=-120V. ᴌLow Pulse Noise. Low 1/f Noise. ᴌComplementary to KTC3200. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING -120 -120 -5 -100 100 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTA1268 EPITAXIAL PLANAR PNP TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE(Note) VCE(sat) VBE fT Cob VCB=-120V, IE=0 VEB=-5V, IC=0 IC=-1mA, IB=0 VCE=-6V, IC=-2mA IC=-10mA, IB=-1mA VCE=-6V, IC=-2mA VCE=-6V, IC=-1mA VCB=-10V, IE=0, f=1MHz Noise Figure VCE=-6V, IC=-100ỌA, f=10Hz, Rg=10kή NF VCE=-6V, IC=-100ỌA, f=1kHz, Rg=10kή VCE=...