KTA1266L

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌExcellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.). f=(1kHz). ᴌComplementary to KTC3198L. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC Tj Tstg RATING -50 -50 -5 -150 150 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Base Intrinsic Resistance ICBO IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT Cob rbb’ VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCB=-10V, IE=1mA, f=30MHz Noise Figure Note : hFE(1) Classification NF(1) VCE=-6V, IC=-0.1mA,f=100Hz, Rg=10kή NF(2) VCE=-6V, IC=-0.1mA, f=1kHz, Rg=10kή O:70ᴕ140, Y:12...