Document
SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-4A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). High Power Dissipation : PC=1W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING -35 -20 -8 -5 -0.5 1 150
-55 150
UNIT V V V A A W
O D
KTA1241
EPITAXIAL PLANAR PNP TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER 2. COLLECTOR 3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
K H
L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO IEBO V(BR)CEO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT
VCB=-35V, IE=0 VEB=-8V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A IC=-3A, IB=-75mA VCE=-2V, IC=-4A VCE=-2V, IC=-0.5A
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:100 200, Y:160 320
MIN. -20 -8
100 70 -
TYP. -
170 62
MAX. -100 -100
320 -0.5 -1.5 -
UNIT nA nA V V
V V MHz pF
1994. 3. 23
Revision No : 0
1/2
KTA1241
1994. 3. 23
Revision No : 0
2/2
.