KTC2022L

SEMICONDUCTOR TECHNICAL DATA KTC2022D/L EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTA1042D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 5 0.5 20 150 -55 150 UNIT V V V A A W Q A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1 1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10 0.95 MAX DPAK Q AI CJ BD H G FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E DIM MILLIMETERS A 6.60+_ 0.2 B 6.10+_ 0.2 C 5.0+_ 0.2 P D 1.10+_ 0.2 E 9.50+_ 0.6 F 2.30+_ 0.1 G 0.76+_ 0.1 H 1.0 MAX I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1 P 1.0 +_0.1 Q 0.90 MAX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification 0:70~140, ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob Y:120~240. VCB=100V, IE=...