KTA1038

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. : VCE(sat)=-2.0V(Max.) ᴌComplementary to KTC2018. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE IB PC Tj Tstg RATING -100 -100 -5 -5 5 -0.5 40 150 -55ᴕ150 UNIT V V V A A A W ᴱ ᴱ H E Q KTA1038 EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.00 6.70 MAX 13.60+_ 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-BaseBreakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE(1) Classification O:70ᴕ140 , Y:120ᴕ240 TEST CONDITION VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 IE=-10mA, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-4A IC=-4A, IB=-0.4A VCE=-5V, IC=-4A VCE=-5V, IC=-1...