SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌComplementary to KTC3210.
KTA1282
EPITAXIAL PLANAR PNP...
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌComplementary to KTC3210.
KTA1282
EPITAXIAL PLANAR
PNP TRANSISTOR
BC
JA
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg
RATING -30 -30 -5 -2 2 625 150
-55ᴕ150
UNIT V V V A A mW ᴱ ᴱ
L M
C
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT
Collector Output Capacitance
Cob
Note : hFE Classification 0:100ᴕ200, Y:160ᴕ320
TEST CONDITION VCB=-30V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IC=-1mA, IC=0 VCE=-2V, IC=-500mA IC=-1.5A, IB=-0.03A VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, IE=0, f=1MHz
MIN. -30 -5
100 -
TYP. -
120 48
MAX. -100 -100
320 -2.0 -1.0 -
UNIT nA nA V V
V V MHz pF
1999. 9. 10
Revision No : 0
1/2
COLLECTOR CURRENT IC (mA)
KTA1282
I C - VCE
-1600 -1400 -1200 -1000
-10 -8
-6
COMMON EMITTER Ta=25 C
-800 -4 -3...