KTA1283

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE ᴌComplementary to KTC3211. KTA1283 EPITAXIAL PLANAR PNP TRANSISTOR BC JA MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -40 -25 -6 -1.5 625 150 -55ᴕ150 UNIT V V V A mW ᴱ ᴱ L M C K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) hFE(2) (Note) hFE(3) VCE(sat) VBE(sat) VBE fT VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-100ỌA, IE=0 IC=-2mA, IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 Note : hFE(2) Classification O:85ᴕ160 , Y:120ᴕ200 , GR:160ᴕ300 MIN. -40 -25 45 85 40 - 100 - TYP. - 170 160 80 -0.28 -0.98 -0.66 200 15 MAX. -100 -100 300 -0.5 -1.2 -1.0 - UNIT nA nA V V V V V M...