SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌComplementary to KTC4512. ᴌRecommended for 30Wᴕ...
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌComplementary to KTC4512. ᴌRecommended for 30Wᴕ35W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING -80 -80 -6 -6 -3 50 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
H
E Q
KTA1726
EPITAXIAL PLANAR
PNP TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.00 6.70 MAX 13.60+_ 0.50
5.60 MAX
1.37 MAX 0.50
1.50 MAX 2.54
4.70 MAX
2.60
1.50 MAX
1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency
ICBO IEBO V(BR)CEO hFE(Note) VCE(sat) fT
Collector Output Capacitance
Cob
Note : hFE Classification R:55~110, O:80~160.
TEST CONDITION VCB=-80V, IE=0 VEB=-6V, IC=0 IC=-25mA, IB=0 VCE=-4V, IC=-2A IC=-2A, IB=-0.2A VCE=-12V, IC=-0.5A VCB=-10V, IE=0, f=1MHz
MIN. -
-80 55 -
TYP. 20
150
MAX. -10 -10 160 -0.5 -
UNIT ỌA ỌA V
V MHz pF
1999. 6. 24
Revision No : 0
1/3
COLLECTOR CURRENT IC (A)
KTA1726
I C - VCE
-6
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