KTC815

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY AMPLIFIER FEATURES Collector-Base Voltage : VCBO=60V. Complementary to KTA539. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC PC Tj Tstg RATING 60 45 5 200 625 150 -55 150 UNIT V V V mA mW L M C KTC815 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 DIM MILLIMETERS N A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VBE VCE(sat) VBE(sat) fT Collector Output Capacitance Cob Note : hFE Classification O:70~140, Y:120~240 TEST CONDITION IC=100 A, IE=0 IC=10mA, IB=0 IE=10 A, IC=0 VCB=45V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=10mA IC=150mA, IB=15mA IC=150mA, IB=15mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz MIN. 60 45 5 70 0.6 100 - TYP. - 0.65 0.15 0.83 200 4 MAX. 0.1 0.1 240 0.9 0.4 1.1 - UNIT V V V A A V V V MHz pF 2003. 3. 5 Revision No ...