KTC9014SC

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Complementary to KTC9015SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC * Tj 80 50 8 100 350 150 Storage Temperature Range Tstg -55 150 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) UNIT V V V mA mW KTC9014SC EPITAXIAL PLANAR NPN TRANSISTOR A G D E L BL 23 1 M DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 1. EMITTER 2. BASE 3. COLLECTOR SOT-23(1) C N K J Marking CBDType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO hFE (Note) VCE(sat) VBE(sat) Transition Frequency fT Note) : hFE Classification C:200~600 TEST CONDITION IC=0.05mA, IE=0 IC=1mA, IB=0 IE=0.05mA, IC=0 VCB=55V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=10mA, f=30MHz MIN. 80 50 8 200 150 TYP. - MAX. 0.1 0.1 600 0.3 1 - UN...