KTD600K

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTB631K. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC ICP Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Storage Temperature Range Tj Tstg RATING 120 120 5 1 2 1.5 8 150 -55 150 UNIT V V V A W KTD600K EPITAXIAL PLANAR NPN TRANSISTOR A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) Note hFE(2) fT Cob VCE(sat) VBE(sat) VCB=50V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=5V, IC=50mA VCE=5V, IC=500mA VCE=10V, IC=50mA VCB=10V, f=1MHz, IE=0 IC=500mA, IB=50mA IC=500mA, IB=50mA Switching Time Turn-on Time Turn-off Time...