SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE Complementary to MPS8050SC.
MAXIMUM RATING (Ta=25 )
CHA...
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE Complementary to MPS8050SC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC * Tj
-40 -25 -5 -1,200 350 150
Storage Temperature Range
Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT V V V mA mW
MPS8550SC
EPITAXIAL PLANAR
PNP TRANSISTOR
A G
D
E L BL
23 1
M
DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23(1)
C N K J
Marking
CBLType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
V(BR)CBO
Collector-Emitter Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
V(BR)EBO ICBO IEBO
hFE (Note) VCE(sat) VBE(sat)
Transition Frequency Note) : hFE Classification D:150~300
fT
TEST CONDITION IC=-0.1mA, IE=0 IC=-1mA, IB=0 IE=-0.1mA, IC=0 VCB=-35V, IE=0 VEB=-4V, IC=0 VCE=-1V, IC=-100mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-6V, IC=-20mA, f=30MHz
MIN. -40 -25 -5 150 150
TYP. -
MAX. -
-0.1 0.1 300 -0.5 -1.2 -
UNIT V V V uA uA
V V MHz
2015. 9. 30
Revision No : 1
1/2
MPS8...