KTC9012SC

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity. Complementary to KTC9013SC. KTC9012SC EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -40 -30 Emitter-Base Voltage VEBO -5 Collector Current IC -500 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) UNIT V V V mA mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Transition Frequency fT TEST CONDITION IC=-0.05mA, IE=0 IC=-1mA, IB=0 IE=-0.05mA, IC=0 VCB=-35V, IE=0 VEB=-4V, IC=0 VCE=-1V, IC=-50mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-6V, IC=-20mA, f=30MHz MIN. -50 -30 -8 200 150 TYP. - MAX. - -0.1 -0.1 300 -0.6 -1.2 - UNIT V V V uA uA V V MHz 2015. 5. 12 Revision No : 0 1/2 KTC9012SC 2015. 5. 12 Revision No : 0 2/2 ...