Document
1MBI1600U4C-170
IGBT MODULE (U series) 1700V / 1600A / 1 in one package
IGBT Modules
Features
High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Ic
Conditions Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C Tc=80°C Tc=25°C Tc=80°C
Maximum ratings 1700 ±20 2400 1600 4800 3200 1600 3200 9760 150
-40 to +125 3400 5.75 10 2.5
Units V V
A
W °C °C VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time Lead resistance, terminal-chip (*3)
Symbols
Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1600mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 1600A
(chip)
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr toff
VCC = 900V, IC = 1600A VGE = ±15V, Tj = 125°C Rgon = 2.7Ω, Rgoff = 1Ω
tf
VF (main terminal) VGE = 0V VF IF = 1600A (chip)
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
trr IF = 1600A
R lead
Characteristics min. typ. max.
- - 1.0 - - 3200 5.5 6.5 7.5 - 2.47 2.65 - 2.87 - 2.25 2.40 - 2.65 - 150 - 1.80 - 0.85 - 1.30 - 0.35 - 2.02 2.40 - 2.22 - 1.80 2.15 - 2.00 - 0.35 - 0.134 -
Units mA nA V
V
nF
µs
V
µs mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device) Contact thermal resistance (1device)
Symbols
Rth(j-c) Rth(c-f)
Conditions
IGBT FWD with Thermal Compound (*4)
Characteristics min. typ. max.
- - 0.013 - - 0.023 - 0.006 -
Units °C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
1MBI1600U4C-170
Characteristics (Representative)
Collector current : Ic [A]
Collector current vs. Collector-Emitter voltage (typ.)
3600
Tj=25°C ,chip
3200
VGE=20V 15V 12V
2800
2400 2000
10V
1600
1200
800 400 8V
0 0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip
3600
3200
Tj=25°C Tj=125°C
2800
2400
2000
1600
1200
800
400
0 012345
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies 100
Cres 10
Coes
1 0 10 20 30 Collector-Emitter voltage : VCE [V]
Capacitance : Cies, Coes, Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [A]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
3600
Tj= 125°C, chip
3200
VGE=20V 15V 12V
2800
2400
2000 1600
10V
1200
800 8V
400
0 0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C ,chip
10
8
6
4
Ic=3200A 2 Ic=1600A
Ic=800A
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
1000 800
Dynamic Gate charge (typ.) Tj= 25°C
25
VCE
VGE 20
600 15
400 10
200 5
00 0 1000 2000 3000 4000 5000 6000 7000
Gate charge : Qg [ nC ]
Gate-Emitter voltage : VGE [V]
2
1MBI1600U4C-170
IGBT Modules
Switching time : ton, tr, toff, tf [ us ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=2.7Ω, Rgoff=1Ω, Tj=125°C 2.4 2.2 ton 2.0 1.8
1.6 1.4 1.2 toff 1.0 tr
0.8 0.6
0.4 0.2 tf
0.0 0 400 800 1200 1600 2000 2400 2800 Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=2.7Ω, Rgoff=1Ω, Tj=125°C
1100
1000 900
Eoff
800 Eon
700 Err 600
500
400
300
200
100
0
0 400 800 1200 1600 2000 2400 2800 Collector current : Ic [ A ] , Forward current : IF [ A ]
3600
Reverse bias safe operating area (max.) ± VGE=15V ,Tj = 125°C / chip
3200
2800
2400
2000
1600
1200
800
400
0
0
400
800
1200
1600
2000
Collector - Emitter voltage : VCE [ V ]
3
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ us ]
Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1600A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0 toff 3.0 tr 2.0
1.0
0.0 0
tf
2 4 6 .