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1MBI1600U4C-170 Dataheets PDF



Part Number 1MBI1600U4C-170
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 1MBI1600U4C-170 Datasheet1MBI1600U4C-170 Datasheet (PDF)

1MBI1600U4C-170 IGBT MODULE (U series) 1700V / 1600A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Conditions Con.

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1MBI1600U4C-170 IGBT MODULE (U series) 1700V / 1600A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Conditions Continuous Collector current Ic pulse 1ms -Ic -Ic pulse 1ms Collector power dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. Mounting (*2) Screw torque Main Terminals (*2) Sense Terminals (*2) Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1700 ±20 2400 1600 4800 3200 1600 3200 9760 150 -40 to +125 3400 5.75 10 2.5 Units V V A W °C °C VAC N·m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Symbols Conditions ICES VGE = 0V, VCE = 1700V IGES VCE = 0V, VGE = ±20V VGE (th) VCE = 20V, IC = 1600mA VCE (sat) (main terminal) VGE = 15V VCE (sat) IC = 1600A (chip) Tj=25°C Tj=125°C Tj=25°C Tj=125°C Cies VGE = 0V, VCE = 10V, f = 1MHz ton tr toff VCC = 900V, IC = 1600A VGE = ±15V, Tj = 125°C Rgon = 2.7Ω, Rgoff = 1Ω tf VF (main terminal) VGE = 0V VF IF = 1600A (chip) Tj=25°C Tj=125°C Tj=25°C Tj=125°C trr IF = 1600A R lead Characteristics min. typ. max. - - 1.0 - - 3200 5.5 6.5 7.5 - 2.47 2.65 - 2.87 - 2.25 2.40 - 2.65 - 150 - 1.80 - 0.85 - 1.30 - 0.35 - 2.02 2.40 - 2.22 - 1.80 2.15 - 2.00 - 0.35 - 0.134 - Units mA nA V V nF µs V µs mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Characteristics min. typ. max. - - 0.013 - - 0.023 - 0.006 - Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 1MBI1600U4C-170 Characteristics (Representative) Collector current : Ic [A] Collector current vs. Collector-Emitter voltage (typ.) 3600 Tj=25°C ,chip 3200 VGE=20V 15V 12V 2800 2400 2000 10V 1600 1200 800 400 8V 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip 3600 3200 Tj=25°C Tj=125°C 2800 2400 2000 1600 1200 800 400 0 012345 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 1000 Cies 100 Cres 10 Coes 1 0 10 20 30 Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Collector - Emitter voltage : VCE [ V ] Collector current : Ic [A] IGBT Modules Collector current vs. Collector-Emitter voltage (typ.) 3600 Tj= 125°C, chip 3200 VGE=20V 15V 12V 2800 2400 2000 1600 10V 1200 800 8V 400 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C ,chip 10 8 6 4 Ic=3200A 2 Ic=1600A Ic=800A 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] 1000 800 Dynamic Gate charge (typ.) Tj= 25°C 25 VCE VGE 20 600 15 400 10 200 5 00 0 1000 2000 3000 4000 5000 6000 7000 Gate charge : Qg [ nC ] Gate-Emitter voltage : VGE [V] 2 1MBI1600U4C-170 IGBT Modules Switching time : ton, tr, toff, tf [ us ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=2.7Ω, Rgoff=1Ω, Tj=125°C 2.4 2.2 ton 2.0 1.8 1.6 1.4 1.2 toff 1.0 tr 0.8 0.6 0.4 0.2 tf 0.0 0 400 800 1200 1600 2000 2400 2800 Collector current : Ic [ A ] Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=2.7Ω, Rgoff=1Ω, Tj=125°C 1100 1000 900 Eoff 800 Eon 700 Err 600 500 400 300 200 100 0 0 400 800 1200 1600 2000 2400 2800 Collector current : Ic [ A ] , Forward current : IF [ A ] 3600 Reverse bias safe operating area (max.) ± VGE=15V ,Tj = 125°C / chip 3200 2800 2400 2000 1600 1200 800 400 0 0 400 800 1200 1600 2000 Collector - Emitter voltage : VCE [ V ] 3 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ us ] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1600A,VGE=±15V, Tj=125°C 6.0 ton 5.0 4.0 toff 3.0 tr 2.0 1.0 0.0 0 tf 2 4 6 .


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