2SK3533-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Lo...
2SK3533-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage
Symbol VDS
Ratings 900
Unit V
VDSX *5
900 V
Continuous drain current
ID
±7 A
Pulsed drain current
ID(puls]
±28 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
7A
Maximum Avalanche Energy
EAS
*1
269.5
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40 kV/µs
Peak Diode Recovery dV/dt Max. power dissipation
dV/dt *3 PD Ta=25°C
Tc=25°C
5 2.02 225
kV/µs W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=10.1mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch =<150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 900V *5 VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
Turn-off time toff
Total Gate Charge Gate-Source Charge ...
