2N7002KU

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V.(Human Body Model) High density cell design for low RDS(ON). Voltage controlled small signal switch. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 1) Drain Power Dissipation (Note 2) Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient (Note 2) VDSS VGSS ID IDP PD Tj Tstg RthJA 60 20 300 1000 270 150 -55 150 460 V V mA mW /W Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Surface Mounted on 2 2 FR4 Board C L A J G 2N7002KU N Channel MOSFET E MB 2 1 NK M DIM MILLIMETERS DA B 2.00+_ 0.20 1.25+_ 0.15 C 0.90+_ 0.10 3 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 L HM 0.70 0.42 N 0.10 MIN N 1. SOURCE 2. GATE 3. DRAIN USM EQUIVALENT CIRCUIT D G S Marking KUType Name Lot No. 2013. 7. 19 Revision No : 1 1/4 2N7002KU ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward BVDSS IDSS IGSSF VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V 60 - Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Vth RDS(ON) gFS VDS=VGS, ID=250 A VGS=10V, ID=300mA VGS=4.5V, ID=250mA VDS=10V, ID=300mA (Note 3) (N...