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KMA3D6N20SA Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part KMA3D6N20SA
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate char ge and excellent avalanche characterist ics.
It is mainly suitable for portable equipment.
FEATURES VDSS=20V, ID=3.
6A Drain-Source ON Resistance RDS(ON)=45m (Max.
) @ VGS=4.
5V RDS(ON)=65m (Max.
) @ VGS=2.
5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+ 0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0 .
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1 .
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP .
Manufacture KEC
Datasheet
Download KMA3D6N20SA Datasheet
Part KMA3D6N20SA
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate char ge and excellent avalanche characterist ics.
It is mainly suitable for portable equipment.
FEATURES VDSS=20V, ID=3.
6A Drain-Source ON Resistance RDS(ON)=45m (Max.
) @ VGS=4.
5V RDS(ON)=65m (Max.
) @ VGS=2.
5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+ 0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0 .
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1 .
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP .
Manufacture KEC
Datasheet
Download KMA3D6N20SA Datasheet

KMA3D6N20SA

KMA3D6N20SA
KMA3D6N20SA

KMA3D6N20SA

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