KMA3D6N20SA

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. FEATURES VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=4.5V RDS(ON)=65m (Max.) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : Surface Mounted on FR4 Board, t 10sec. SYMBOL N-Ch UNIT VDSS VGSS 20 V 12 V ID 3.6 A IDP 14 IS 1.25 A 1.25 PD W 0.8 Tj 150 Tstg -55 150 RthJA 100 /W PIN CONNECTION (TOP VIEW) D 3 3 2 G 2012. 8. 22 12 S Revision No : 2 1 SOT-23 KNC 1/5 KMA3D6N20SA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic BVDSS IDSS IGSS ...