KMB3D5N40SA

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter. FEATURES VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=62m (Max.) @ VGS=4.5V Super High Dense Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC@Ta=25 Drain Current DC@Ta=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation Ta=25 Ta=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note > *Surface Mounted on 1” 1” FR4 Board, t SYMBOL N-Ch VDSS VGSS 40 20 3.5 ID 2.8 IDP 14 IS 1.0 1.25 PD 0.8 Tj 150 Tstg -55 150 RthJA 5sec 100 UNIT V V A A W /W PIN CONNECTION (TOP VIEW) D 3 3 2 G 2013. 11. 08 1 21 S Revision No : 1 SOT-23 MA1 1/5 KMB3D5N40SA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward...