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KMB3D5N40SA Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part KMB3D5N40SA
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate char ge and excellent avalanche characterist ics.
It is mainly suitable for Load swi tch and Back-Light Inverter.
FEATURES V DSS=40V, ID=3.
5A Drain-Source ON Resist ance RDS(ON)=45m (Max.
) @ VGS=10V RDS(O N)=62m (Max.
) @ VGS=4.
5V Super High Den se Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.
93 +_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+ 0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
1 0/-0.
05 Q K 0 .
Manufacture KEC
Datasheet
Download KMB3D5N40SA Datasheet
Part KMB3D5N40SA
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate char ge and excellent avalanche characterist ics.
It is mainly suitable for Load swi tch and Back-Light Inverter.
FEATURES V DSS=40V, ID=3.
5A Drain-Source ON Resist ance RDS(ON)=45m (Max.
) @ VGS=10V RDS(O N)=62m (Max.
) @ VGS=4.
5V Super High Den se Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.
93 +_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+ 0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
1 0/-0.
05 Q K 0 .
Manufacture KEC
Datasheet
Download KMB3D5N40SA Datasheet

KMB3D5N40SA

KMB3D5N40SA
KMB3D5N40SA

KMB3D5N40SA

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