KMB6D0DN30QB

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC Converter Applications. FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS 30 Gate Source Voltage Drain Current DC Pulsed Drain Source Diode Forward Current VGSS ID * IDP IS 20 6 30 1.7 Drain Power Dissipation 25 PD * 2 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -50~150 Thermal Resistance, Junction to Ambient RthJA* 62.5 Note> *Surface Mounted on FR4 Board, t 10sec. UNIT V V A A A W /W KMB6D0DN30QB Dual N-Ch Trench MOSFET DP H T G U L A DIM MILLIMETERS A 4.85+_ 0.2 85 B1 3.94+_ 0.2 B2 6.02+_ 0.3 B1 B2 D 0.4+_ 0.1 G 0.15+0.1/-0.05 14 H 1.63+_ 0.2 L 0.65+_ 0.2 P 1.27 T 0.20+0.1/-0.05 U 0.1 MAX FLP-8 KMB6D0DN 30QB PIN CONNECTION (TOP VIEW) S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 1 2 3 4 8 7 6 5 2011. 8. 30 Revision No : 0 1/5 KMB6D0DN30QB ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC Static SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Thre...