KML0D3P20V

SEMICONDUCTOR TECHNICAL DATA General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance : RDS(ON)=1.2 : RDS(ON)=1.6 : RDS(ON)=2.7 @ VGS=-4.5V @ VGS=-2.5V @ VGS=-1.8V KML0D3P20V P-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage Drain Current DC @TA=25 DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient VDSS VGSS ID* IDP IS PD* Tj Tstg RthJA* Note 1) *Surface Mounted on FR4 Board, t 5sec P-Ch -20 6 -300 -210 -650 125 150 150 -55 150 446 UNIT V V mA mW /W 2014. 8. 05 Revision No : 1 1/4 KML0D3P20V ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Source-Drain Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge BVDSS IDSS IGSS Vth RDS(ON)* gfs* VSD* Qg* QgS* Qgd* ID=-250 A, VGS=0V VGS=0V, VDS=-16V VGS= 4.5V, VDS=0V VDS=VGS, ID=-250 A VGS=-4.5V, ID=-300mA VGS=-2.5V, ID=-250mA VGS=-1.8V, ID=-150mA VDS=-10V, ID=-300mA IS=-150mA, VGS=0V VDS=-10V, ID=-250mA, VGS=-4.5V Turn-on Delay time Turn-off Delay time td(on)* td(off)* VDD=-10V, VGS=-4.5V ID=-200mA, RG=10 Note 2) ...